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  silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 1/10 electrostatic sensitive device observe handling precautions description rd15hvf1 is a mos fet type transistor specifically designed for vhf/uhf high power amplifiers applica -tions. features high power and high gain: pout>15w, gp>14db @vdd=12.5v,f=175mhz pout>15w, gp>7db @vdd=12.5v,f=520mhz high efficiency: 60%typ. on vhf band high efficiency: 55%typ. on uhf band application for output stage of high power amplifiers in vhf/uhf band mobile radio sets. rohs compliant rd15hvf1-101 is a rohs compliant products. rohs compliance is indicate by the letter ?g? after the lot marking. this product include the lead in high melting temperature type solders. how ever,it applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders(i.e.ti n-lead solder alloys containing more than85% lead.) outline drawing  note: torelance of no designation means typical value. dimension in mm. 0.5+0.10/-0.15 pins 1:gate 2:source 3:drain 1.3+/-0.4 1 2 . 3 m i n 2.5 9.5max 5deg 2.5 4 . 5 + / - 0 . 5 3 . 1 + / - 0 . 6 3.6+/-0.2 0.8+0.10/-0.15 1.2+/-0.4 2 9.1+/-0.7 1 2 . 3 + / - 0 . 6 9 + / - 0 . 4 4 . 8 m a x 1 3 . 2 + / - 0 . 4 3 2 
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 2/10 electrostatic sensitive device observe handling precautions absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss gate to source voltage vds=0v +/-20 v pch channel dissipation tc=25 c 48 w pin input power zg=zl=50 ? 1.5(note2) w id drain current - 4 a tch channel temperature - 150 c tstg storage temperature - -40 to +150 c rth j-c thermal resistance junction to case 2.6 c/w note 1: above paramet ers are guaranteed independently. note 2: over 300mhz use spec is 6w electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 100 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1 ua v th gate threshold voltage v ds =12v, i ds =1ma 1.5 2.0 2.5 v pout1 output power v dd =12.5v, pin=0.6w, 15 18 - w d1 drain efficiency f=175mhz,idq=0.5a 55 60 - % pout2 output power v dd =12.5v, pin=3w, 15 18 - w d2 drain efficiency f=520mhz,idq=0.5a 50 55 - % load vswr tolerance v dd =15.2v,po=15w(pincontrol) f=175mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =15.2v,po=15w(pincontrol) f=520mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , lim its and conditions are subject to change.
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 3/10 electrostatic sensitive device observe handling precautions typical characteristics channnel dissipation vs. ambient temperature 0 20 40 60 80 100 0 40 80 120 160 200 ambient temperature ta(c) channel dissipation pch(w) vds-ids characteristics 0 2 4 6 8 10 0246810 vds(v) ids(a) ta=+25c vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4v vgs=3v vgs=10v vds vs. ciss characteristics 0 20 40 60 80 0 5 10 15 20 vds(v) ciss(pf) ta=+25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 0 5 10 15 20 vds(v) coss(pf) ta=+25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 0 5 10 15 20 vds(v) crss(pf) ta=+25c f=1mhz vgs-ids characteristics 0 2 4 6 8 10 0246810 vgs(v) ids(a) ta=+25c vds=10v
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 4/10 electrostatic sensitive device observe handling precautions typical characteristics vdd-po characteristics 0 5 10 15 20 25 4 6 8 101214 vdd(v) po ( w) 0 1 2 3 4 5 idd(a) po idd ta=25c f=175m hz pin=0.6w idq=0.5a zg=zi=50 ohm pin-po characteristics 0 5 10 15 20 25 0123456 pin ( w) pout(w) , idd(a) 0 20 40 60 80 100 d(%) po d idd ta=25c f=520m hz vdd=12.5v idq=0.5a vdd-po characteristics 0 5 10 15 20 25 468101214 vdd(v) po ( w) 0 1 2 3 4 5 idd(a) po idd ta=25c f=520m hz pin=3w idq=0.5a zg=zi=50 ohm pin-po characteristics 0 5 10 15 20 25 0.0 0.5 1.0 1.5 pin ( w) pout(w) , idd(a) 0 20 40 60 80 100 d(%) po d idd ta=25c f=175m hz vdd=12.5v idq=0.5a pin-po characteristics 0 10 20 30 40 50 0102030 pin(dbm) po(dbm) , gp(db) , idd(a) 0 20 40 60 80 100 d(%) ta=+25c f=175mhz vdd=12.5v idq=0.5a po 3 33 gp pin-po characteristics 0 10 20 30 40 50 0 10203040 pin(dbm) po(dbm) , gp(db) , idd(a) 0 20 40 60 80 100 d(%) ta=+25c f=520mhz vdd=12.5v idq=0.5a po 3 33 gp
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 5/10 electrostatic sensitive device observe handling precautions typical characteristics test circuit(f=175mhz) vgs-ids characteristics 2 0 2 4 6 8 10 0246810 vgs(v) ids(a) vds=10v tc=-25~+75c -25c +75c +25c l3:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 25pf 25pf 92 95 56pf 25pf 25pf 73 12 40 42 25pf 25pf 10pf 8.2kohm l3 45 22 7 100 74 micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm note:board material-teflon substrate c1:2200pf 10uf in parallel c2 rf-out c1 l1:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 100ohm vgg vdd rf-in 56pf dimensions:mm 25pf 82pf 7 62 100 9.1kohm l1 c2:2200pf*2 in parallel c3 c3:2200pf,330uf in parallel l2 l2:5turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 175mhz rd15hvf1
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 6/10 electrostatic sensitive device observe handling precautions test circuit(f=520mhz) rd15hvf1 520mhz l2:2turns,i.d6mm,d1.6mm p=1 silver plateted copper wire l2 c3:2200pf,330uf in parallel c3 c2:2200pf*2 in parallel l1 100 7 56pf dimensions:mm 56pf rf-in vdd vgg 100ohm l1:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire c1 rf-out c2 c1:2200pf 10uf in parallel note:board material-teflon substrate micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm 100 7 90 l3 8.2kohm 5pf 15pf 10pf 90 12pf l3:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 9.1kohm
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 7/10 electrostatic sensitive device observe handling precautions input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 175 2.34-j8.01 3.06+j0.74 po=15w, vdd=12.5v,pin=0.6w 520 5.42+j9.22 6.02+j12.34 po=15w, vdd=12.5v,pin=3.0w zo=50ohm f=175mhz zin f=175mhz zout f=520mhz zin f=520mhz zout
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 8/10 electrostatic sensitive device observe handling precautions rd15hvf1 s-parameter dat a (@vdd=12.5v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 50 0.717 -145.9 23.274 101.8 0.023 26.0 0.556 -130.2 100 0.726 -163.9 12.054 85.7 0.024 27.7 0.547 -150.4 150 0.744 -171.1 8.049 74.7 0.025 36.1 0.560 -157.8 175 0.748 -173.6 6.804 70.2 0.025 41.8 0.571 -160.1 200 0.755 -175.9 5.886 66.3 0.026 48.1 0.588 -161.8 250 0.770 -179.0 4.622 58.6 0.030 57.7 0.625 -164.3 300 0.787 177.6 3.731 51.5 0.036 65.3 0.647 -167.5 350 0.804 174.6 3.092 45.3 0.044 70.3 0.683 -170.9 400 0.821 171.2 2.623 39.1 0.053 73.5 0.716 -173.7 450 0.838 168.2 2.229 33.2 0.062 74.6 0.734 -176.8 500 0.849 165.1 1.938 28.3 0.072 73.9 0.765 179.4 520 0.854 163.7 1.845 26.1 0.076 73.9 0.777 178.0 550 0.862 161.7 1.695 22.9 0.082 72.6 0.788 176.3 800 0.900 145.0 0.971 4.2 0.135 62.8 0.859 159.0 850 0.904 141.3 0.864 0.0 0.143 59.6 0.870 155.7 900 0.909 137.9 0.790 -1.4 0.153 57.8 0.877 152.4 950 0.910 134.6 0.738 -4.4 0.163 54.8 0.880 149.0 1000 0.910 131.2 0.662 -6.8 0.170 51.4 0.886 145.7 1050 0.911 127.5 0.612 -8.4 0.178 49.4 0.892 142.1 s11 s21 s12 s22
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 9/10 electrostatic sensitive device observe handling precautions attention: 1.high temperature ; this product might have a heat generation while operation,please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefor e appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf-swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case o f tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximu m rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. please refer to the additional precautions in the formal specification sheet.
silicon rf power semiconductors rd15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w rd15hvf1 6 jul 2010 10/10 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. trouble with semiconductors ma y lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electr ic corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an aut horized mitsubishi semiconducto r product distributor for the latest product informatio n before purchasing a product listed herein. t he information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay a ttention to information published by mitsubish i electric corporation by various means, including the mitsubishi semiconductor hom e page (http:// www.mits ubishichips.com). - when using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electr ic corporation or an authorize d mitsubishi semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems fo r transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the products contained therein. notes regarding these materials


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